
NP82N04PUG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
350
300
250
Pulsed
1000
100
10
V DS = 10 V
Pulsed
200
150
100
50
0
V GS = 10 V
1
0.1
0.01
0.001
T A = 175°C
150°C
125°C
85°C
? 55°C
? 25°C
25°C
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1
2
3
4
5
6
7
V DS - Drain to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
V GS - Gate to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
4
3.5
3
2.5
100
10
V DS = 10 V
Pulsed
T A = ? 55°C
25°C
85°C
125°C
175°C
2
1.5
1
1
0.5
0
V DS = V GS
I D = 250 μ A
0.1
-100
-50
0
50
100
150
200
0.1
1
10
100
1000
T ch - Channel Temperature - ° C
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
I D - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
5
4
3
V GS = 10 V
Pulsed
7
6
5
4
I D = 82 A
41 A
16.4 A
Pulsed
3
2
1
2
1
0
1
10
100
1000
0
0
2
4
6
8
10 12 14 16 18 20
4
I D - Drain Current - A
Data Sheet D16858EJ1V0DS
V GS - Gate to Source Voltage - V